Search results for "electromagnetic [current]"
showing 10 items of 1008 documents
Numerical simulation of radiated EMI in 42V electrical automotive architectures
2006
The work is focused on the evaluation of radiated electromagnetic interference generated by dc/dc converters in 42 V systems automotive environment. The results obtained by using the method of moments and the finite difference time domain method, separately, are presented and validated in comparison with those measured in a semi-anechoic electromagnetic chamber. A measurement system set up by the authors is employed. Both the used numerical approaches are proved to be an useful tool for radiated disturbance prediction, and also for electromagnetic compatibility oriented design of the vehicle electrical architecture.
Nd:YAG laser induced E′ centers probed by in situ absorption measurements
2005
We investigated various types of commercial silica irradiated with a pulsed Nd:YAG laser radiation (4.66 eV), with exposure time ranging up to 10000 s. Transient E' centers were probed in situ by measuring the amplitude of the optical absorption band at 5.8 eV (due to E' centers) both during and after irradiation. The laser-induced absorption is observed only in natural samples, whereas the synthetic materials exhibit high toughness to radiation effect. The reported results evidence that the kinetics of E' centers is influenced by their reaction with diffusing molecular hydrogen H2 made available by dimerization of radiolytic H0.
Spectroscopic parameters related to non bridging oxygen hole centers in amorphous-SiO2
2005
The relationship between the luminescence at 1.9 eV and the absorption bands at 2.0 eV and at 4.8 eV were investigated in a wide variety of synthetic silica samples exposed to different gamma- and beta-ray irradiation doses. We found that the intensities of these optical bands are linearly correlated in agreement with the model in which they are assigned to a single defect. This finding allows to determine spectroscopic parameters related to optical transitions efficiency: the oscillator strength of the 4.8 eV results ~200 times higher than that of the 2.0 eV; the 1.9 eV luminescence quantum yield under 4.8 eV excitation is lower (by a factor ~3) than that under 2.0 eV excitation. These res…
Revealing the importance of interfaces for pure spin current transport
2021
Spin transport phenomena underpin an extensive range of spintronic effects. In particular spin transport across interfaces occurs in most device concepts, but is so far poorly understood. As interface properties strongly impact spin transport, one needs to characterize and correlate them to the fabrication method. Here we investigate pure spin current transport across interfaces and connect this with imaging of the interfaces. We study the detection of pure spin currents via the inverse spin Hall effect in Pt and the related spin current absorption by Pt in Py-Cu-Pt lateral spin valves. Depending on the fabrication process, we either find a large (inverse) spin Hall effect signal and low sp…
Optical absorption induced by UV laser radiation in Ge-doped amorphous silica probed by in situ spectroscopy
2007
We studied the optical absorption induced by 4.7eV pulsed laser radiation on Ge-doped a-SiO2 synthesized by a sol-gel technique. The absorption spectra in the ultraviolet spectral range were measured during and after the end of irradiation with an in situ technique, evidencing the growth of an absorption signal whose profile is characterized by two main peaks near 4.5eV and 5.7eV and whose shape depends on time. Electron spin resonance measurements performed ex situ a few hours after the end of exposure permit to complete the information acquired by optical absorption by detection of the paramagnetic Ge(1) and Ge-E' centers laser-induced in the samples.
UV-Photoinduced Defects In Ge-Doped Optical Fibers
2005
We investigated the effect of continuous-wave (cw) UV laser radiation on single-mode Ge-doped H2- loaded optical fibers. An innovative technique was developed to measure the optical absorption (OA) induced in the samples by irradiation, and to study its dependence from laser fluence. The combined use of the electron spin resonance (ESR) technique allowed the structural identification of several radiation-induced point defects, among which the Ge(1) (GeO4 -) is found to be responsible of induced OA in the investigated spectral region.
<title>Multiphoton-absorption-induced structural changes in fused silica</title>
1991
The basic properties (light refractive index, density, mechanical strength, etc.) of fused silica are changed by the influence of high-intensity light from the glass transparency region capable of generating excitons by multiphoton absorption. The self-trapped exciton decay near the microcavity in the fused silica structure leads to the stable elementary intrinsic defect pair (nonbridging oxygen atom and three-fold-coordinated silicon atom) generation. At the large- enough light intensities near such a microcavity with a defect, the next exciton can be self- trapped. Then the next elementary defect can appear in the microcavity, and a chemical bond between it and the previously generated de…
Luminescence center excited state absorption in tungstates
2001
The excited state absorption of intrinsic luminescence center (self-trapped exciton) in tungstates (CaWO4, ZnWO4, PbWO4 and CdWO4) was studied. The transient absorption and luminescence spectra, decay kinetics and lifetime dependencies on temperature have been measured. The model of self-trapped exciton and nature of observed absorption bands were discussed.
Magnetic Field and Short-Circuit Reactance Calculation of the 3-Phase Transformer with Symmetrical Amorphous Core
2006
Magnetically symmetric, 3- phase transformer has been analysed. For the two variants of the windings, the calculation results have been compared with the measured ones. Magnetic flux density components were calculated in and out of the core. The flux distribution and short-circuit reactance have been verified experimentally and a good agreement has been obtained.
Luminescence of a self-trapped exciton in GeO2 crystal
1993
Abstract The self-trapped exciton (STE) is discovered in the GeO2 crystal. A PL band at 2.5 eV with a strong Stokes shift is excited only in the fundamental absorption range of GeO2 crystal with the quantum yield about 0.4 and the decay time constant 800 ± 5 μs at 80 K. The PL thermal quenching occurs at 200 K with the energy about 0.25 eV and the frequency factor 107. At 4.5 K the PL decay kinetics splits into two components with time constants 270 μs and 8000 μs, which can be due to a triplet state split in the zero magnetic field. The STE in GeO2 is very similar to a STE in SiO2.